N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh?줡ower MOSFET With FAST DIODE

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ High dv/dt and avalanche capabilities ■ 100 avalanche

文件：287.87 Kbytes 页数：7 Pages

STMICROELECTRONICS

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N-channel 500 V, 0.22 廓, 20 A D2PAK, TO-220FP, TO-220 FDmesh??Power MOSFET

文件：403.2 Kbytes 页数：16 Pages

STMICROELECTRONICS

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N-CHANNEL 500V - 0.22W - 20A TO-220/TO-220FP/D2PAK FDmesh??Power MOSFET (with FAST DIODE)

文件：494.71 Kbytes 页数：11 Pages

STMICROELECTRONICS

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丝印：D2PAK；Package：TO-263；isc N-Channel Mosfet Transistor

文件：296.81 Kbytes 页数：2 Pages

ISC

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N-CHANNEL 500V - 0.22ohm - 20A TO-220/I2PAK FDmesh??Power MOSFET with FAST DIODE

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ High dv/dt and avalanche capabilities ■ 100 avalanche

文件：276.77 Kbytes 页数：9 Pages

STMICROELECTRONICS

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N-channel 500 V, 0.22 廓, 20 A D2PAK, TO-220FP, TO-220 FDmesh??Power MOSFET

文件：403.2 Kbytes 页数：16 Pages

STMICROELECTRONICS

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N-Channel 500V - 0.22Ohm - 20A - D2PAK FDmesh(TM) POWER MOSFET (with FAST DIODE)

• High dv/dt and avalanche capabilities\n• Low input capacitance and gate charge\n• 100% avalanche tested• Tight process control and high manufacturing yields\n• Low gate input resistance;

ST

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