FQB6N15

150VN-ChannelMOSFET

Features •6.4A,150V,RDS(on)=0.6Ω@VGS=10V •Lowgatecharge(typical6.5nC) •LowCrss(typical9.6pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

FQD6N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FQI6N15

150VN-ChannelMOSFET

Features •6.4A,150V,RDS(on)=0.6Ω@VGS=10V •Lowgatecharge(typical6.5nC) •LowCrss(typical9.6pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

FQP6N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FQP6N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.4A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQPF6N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FQU6N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FQU6N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTD6N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

MTD6N15

TMOSPOWERFET6.0AMPERES150VOLTSRDS(on)=0.3OHM

PowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisTMOSPowerFETisdesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. •SiliconGateforFastSwitchingSp

MTD6N15

PowerFieldEffectTransistorDPAKforSurfaceMount

MTD6N15I

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

NTD6N15

N-ChannelMOSFET

SSM6N15AFE

LoadSwitchingApplications

SSM6N15AFU

LoadSwitchingApplications

SSM6N15FE

HighSpeedSwitchingApplications

SSM6N15FU

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType

HighSpeedSwitchingApplications AnalogSwitchingApplications •Smallpackage •LowONresistance:Ron=4.0Ω(max)(@VGS=4V) :Ron=7.0Ω(max)(@VGS=2.5V)

SSM6N15FU

DualN-Channel60V(D-S)MOSFET

UF6N15Z

6A,150VN-CHANNELPOWERMOSFET