丝印：DP；Package：SOT-363；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

High Speed Switching Applications Analog Switching Applications • Small package • Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)

文件：154.65 Kbytes 页数：5 Pages

TOSHIBA

东芝

Dual N-Channel 60 V (D-S) MOSFET

文件：945.85 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

High Speed Switching Applications

文件：176.49 Kbytes 页数：5 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：N-ch×2\nGeneration：π-MOSⅥ\nInternal Connection：Independent\nComponent Product (Q1)：SSM3K15FU\nComponent Product (Q2)：SSM3K15FU\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current (Q1) ID 0.1 A \nDrain-Source voltage (Q1) VDSS 30 V \nGate-Source voltage (Q1) VGSS +/-20 V \nDrain current (Q2) ID 0.1 A \nDrain-Source voltage (Q2) VDSS 30 V \nGate-Source voltage (Q2) VGSS +/-20 V ;

Toshiba

东芝