isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

文件：359.29 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET

文件：1.66479 Mbytes 页数：5 Pages

KEXIN

科信电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.17 Kbytes 页数：2 Pages

ISC

无锡固电

Load Switching Applications

文件：173.2 Kbytes 页数：5 Pages

TOSHIBA

东芝