Small Low ON resistance MOSFETs

Polarity：N-ch×2\nGeneration：U-MOSⅢ\nInternal Connection：Independent\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current (Q1) ID 0.1 A \nDrain-Source voltage (Q1) VDSS 30 V \nGate-Source voltage (Q1) VGSS ±20 V \nDrain current (Q2) ID 0.1 A \nDrain-Source voltage (Q2) VDSS 30 V \nGate-Source voltage (Q2) VGSS ±20 V \nPower Dissipation PD 0.15 W ;

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Load Switching Applications

文件：173.2 Kbytes 页数：5 Pages

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Load Switching Applications

文件：197.54 Kbytes 页数：5 Pages

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High Speed Switching Applications

文件：180.43 Kbytes 页数：5 Pages

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

High Speed Switching Applications Analog Switching Applications • Small package • Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)

文件：154.65 Kbytes 页数：5 Pages

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