MTD6N15

TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM

PowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisTMOSPowerFETisdesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. •SiliconGateforFastSwitchingSp

MTD6N15

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

MTD6N15

功率 MOSFET，150V，6A，300mΩ，单 N 沟道，DPAK; • Silicon Gate for Fast Switching Speeds\n• Low RDS(on)0.3 W Max\n• RuggedSOA is Power Dissipation Limited\n• Source-to-Drain Diode Characterized for Use With Inductive Loads\n• Low Drive RequirementVGS(th) = 4.0 V Max\n• Surface Mount Package on 16 mm Tape;

N 沟道增强模式硅门极 此功率 FET 适用于高速、低损耗电源开关应用，如开关稳压器、转换器、电磁和继电器驱动器。

MTD6N15

Power Field Effect Transistor DPAK for Surface Mount

MTD6N15I

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

MTD6N15T4G

N-Channel 200 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •PWMOptimized •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

MTD6N15-1

Power Field Effect Transistor DPAK for Surface Mount

MTD6N15T4

Power Field Effect Transistor DPAK for Surface Mount

MTD6N15T4G

N?묬hannel Enhancement?묺ode Silicon Gate