TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM

Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Sp

文件：231.95 Kbytes 页数：10 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

文件：345.09 Kbytes 页数：2 Pages

ISC

无锡固电

Power Field Effect Transistor DPAK for Surface Mount

文件：88.65 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

功率 MOSFET，150V，6A，300mΩ，单 N 沟道，DPAK

N 沟道增强模式硅门极 此功率 FET 适用于高速、低损耗电源开关应用，如开关稳压器、转换器、电磁和继电器驱动器。 • Silicon Gate for Fast Switching Speeds\n• Low RDS(on)0.3 W Max\n• RuggedSOA is Power Dissipation Limited\n• Source-to-Drain Diode Characterized for Use With Inductive Loads\n• Low Drive RequirementVGS(th) = 4.0 V Max\n• Surface Mount Package on 16 mm Tape;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

文件：359.29 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：1.00989 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Power Field Effect Transistor DPAK for Surface Mount

文件：88.65 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power Field Effect Transistor DPAK for Surface Mount

文件：88.65 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N?묬hannel Enhancement?묺ode Silicon Gate

文件：125.12 Kbytes 页数：6 Pages

ONSEMI

安森美半导体