150V N-Channel MOSFET

Features • 6.4A, 150V, RDS(on) = 0.6Ω @VGS = 10 V • Low gate charge ( typical 6.5 nC) • Low Crss ( typical 9.6 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

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Fairchild

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MOSFET N-CH 150V 6.4A I2PAK

ONSEMI

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150V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

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Fairchild

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.4A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

150V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：744.48 Kbytes 页数：8 Pages

Fairchild

仙童半导体