丝印：SCT40H12G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：386.35 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：40H65G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：389.28 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade silicon carbide Power MOSFET 650 V, 40 m typ., 30 A in an H2PAK-7 straight leads package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Description This silicon carbide Power MOSFET device has been developed using ST

文件：227.64 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HU3PAK package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • DC/DC converter for EV/HEV • Main inverter (electric traction)

文件：623.94 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：SCT40HU65G3AG；Package：HU3PAK；Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an HU3PAK package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：939.07 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：040TO65G3；Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 35 A in a TO-LL package

Features • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Source sensing pin for increased efficiency Applications • Switching mode power supply • DC-DC converters Description This silicon carbide Po

文件：1.52722 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：SCT40W120G34；Package：HiP247-4；Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247-4 package

Features • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Very high operating junction temperature capability (TJ = 200 °C) Applications • Switching mode power supply • Power supply for renewable energy

文件：503.37 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：40W120G3AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) Applications • Main inverter (electric traction) • DC/DC

文件：235.44 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：040W65G3；Package：HiP247-4；Silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package

Features • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications • Switching mode pow

文件：483.84 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：SCT040W65G3；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package

Features • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) •

文件：489.79 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体