Humidity and Temperature Wall Mount Transducers

Features • Enhanced accuracy: - ±4 %RH (10 %RH to 90 %RH at 25 °C), ±5 %RH (10 %RH to 90 %RH at 5 °C to 50 °C) - Enables the customer to potentially reduce/eliminate transmitter recalibration cost and supports and optimizes system accuracy and uptime • Long-term stab

文件：587.45 Kbytes 页数：7 Pages

Honeywell

霍尼韦尔

丝印：011H75G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：395.49 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：SCT01175G3AG；Package：HU3PAK；Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：954.66 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：12H90G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：390.44 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：015W120G34AG；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package

Features • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) •

文件：499.88 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：16H120G3AG；Package：HPAK-7；Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mΩ typ., 112 A in an H²PAK-7 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • DC/DC converter for EV/HEV • Main inverter (electric traction)

文件：666.09 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：18H65G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：390.98 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

SiC N-Channel MOSFET

FEATURES · High Speed Switching with Low Capacitance · Easy to Parallel and Simple to Drive · High Blocking Voltage with Low On-Resistance APPLICATIONS · EV Battery Chargers · Renewable Energy · High Voltage DC/DC Converters · Switch Mode Power Supplies

文件：340.17 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：18W65G34AG；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an HiP247-4 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications

文件：506.41 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：20H120G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：362.55 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体