Automotive-grade silicon carbide Power MOSFET 650 V, 40 m typ., 30 A in an H2PAK-7 straight leads package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Description This silicon carbide Power MOSFET device has been developed using ST

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STMICROELECTRONICS

意法半导体

Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 straight leads package

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application p • AEC-Q101 qualified \n• Very low RDS(on) over the entire temperature range \n• High speed switching performances \n• Very fast and robust intrinsic body diode \n• Source sensing pin for increased efficiency;

ST

意法半导体

Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

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STMICROELECTRONICS

意法半导体

TO-247-3

ROHM

罗姆

上传：深圳市金嘉锐电子有限公司

SOT23

SCT芯洲

上传：深圳市天芯半导体科技有限公司