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SCT040H65G3SAG数据手册ST中文资料规格书
SCT040H65G3SAG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
两年内 |
NA |
326 |
实单价格可谈 |
询价 | ||
ST |
22+ |
NA |
5000 |
原装正品支持实单 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
24+ |
100 |
询价 | |||||
STMicroelectronics |
23+ |
H2PAK-2 |
3652 |
原厂正品现货供应SIC全系列 |
询价 | ||
STMicroelectronics |
24+ |
原厂封装 |
12634 |
有挂就有货只做原装正品 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
9999 |
询价 | |||
ST(意法) |
23+ |
10000 |
只做全新原装,实单来 |
询价 | |||
ST |
22+ |
BGA |
1000 |
原装正品碳化硅 |
询价 |
