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SCT040H65G3SAG中文资料Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 straight leads package数据手册ST规格书
SCT040H65G3SAG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
两年内 |
NA |
326 |
实单价格可谈 |
询价 | ||
STMicroelectronics |
24+ |
原厂封装 |
12634 |
有挂就有货只做原装正品 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
24+ |
100 |
询价 | |||||
鑫远鹏 |
25+ |
NA |
5000 |
价优秒回原装现货 |
询价 | ||
STMicroelectronics |
23+ |
H2PAK-2 |
3652 |
原厂正品现货供应SIC全系列 |
询价 | ||
ST(意法) |
23+ |
10000 |
只做全新原装,实单来 |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
STN |
2405+ |
原厂封装 |
53931 |
只做原装优势现货库存 渠道可追溯 |
询价 | ||
ST(意法) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 |
