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SCT012H90G3AG数据手册ST中文资料规格书
SCT012H90G3AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
N/A |
7500 |
原装现货17377264928微信同号 |
询价 | ||
STMicro |
22+ |
NA |
4000 |
原装正品支持实单 |
询价 | ||
24+ |
789 |
询价 | |||||
ST |
25+ |
30000 |
原装现货,可追溯原厂渠道 |
询价 | |||
ST(意法) |
23+ |
10000 |
只做全新原装,实单来 |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
STM |
两年内 |
NA |
520 |
实单价格可谈 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST |
22+ |
BGA |
1000 |
原装正品碳化硅 |
询价 | ||
ST |
2443 |
只做正品 |
询价 |
