SCT011H75G3AG数据手册分立半导体产品的晶体管-FETMOSFET-单个规格书PDF

描述 Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

特性 Features

• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency

简介

SCT011H75G3AG属于分立半导体产品的晶体管-FETMOSFET-单个。由制造生产的SCT011H75G3AG晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。