Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an H2PAK-7 package

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application p • AEC-Q101 qualified \n• Very low RDS(on) over the entire temperature range \n• High speed switching performances \n• Very fast and robust intrinsic body diode \n• Source sensing pin for increased efficiency;

ST

意法半导体

丝印：011H75G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：395.49 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET 750 V 110A H2PAK7

STMICROELECTRONICS

意法半导体

TO-247-4

ST/意法

上传：深圳市羿芯诚电子有限公司

TO-247-3

ROHM

罗姆

上传：深圳市金嘉锐电子有限公司