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SCT018W65G3AG数据手册ST中文资料规格书
SCT018W65G3AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (TJ = 200 °C)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
SMD |
87500 |
郑重承诺只做原装进口现货 |
询价 | ||
ST(意法) |
2511 |
4945 |
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询价 | |||
AIM |
24+ |
8215 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
9999 |
询价 | |||
STM |
两年内 |
NA |
520 |
实单价格可谈 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
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询价 | ||
ST |
22+ |
NA |
10000 |
原装正品支持实单 |
询价 | ||
ST |
22+ |
N/A |
8000 |
只做原装正品 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
11000 |
询价 |
