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SCT018H65G3-7数据手册ST中文资料规格书
SCT018H65G3-7规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• Very fast and robust intrinsic body diode
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
2511 |
4945 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST |
22+ |
N/A |
8000 |
只做原装正品 |
询价 | ||
STMicro |
22+ |
NA |
4000 |
原装正品支持实单 |
询价 | ||
24+ |
789 |
询价 | |||||
STM |
两年内 |
NA |
520 |
实单价格可谈 |
询价 | ||
ST |
47920 |
只做正品 |
询价 | ||||
ST |
25+ |
30000 |
原装现货,可追溯原厂渠道 |
询价 | |||
ST |
22+ |
BGA |
1000 |
原装正品碳化硅 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 |
