首页>SCT027W65G3-4AG>规格书详情
SCT027W65G3-4AG中文资料汽车级碳化硅功率MOSFET，650 V、40 mOhm（典型值），110 A，HiP247-4封装数据手册ST规格书
SCT027W65G3-4AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Very high operating junction temperature capability (TJ = 200 °C)
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AIM |
24+ |
8215 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
ST |
22+ |
N/A |
17000 |
只做原装正品 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
STMicroelectronics |
23+ |
SMD |
3652 |
原厂正品现货供应SIC全系列 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
ST(意法) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ST |
2404+ |
TO-247 |
30 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
ST(意法) |
23+ |
10000 |
只做全新原装,实单来 |
询价 | |||
ST |
20000 |
原装现货,可追溯原厂渠道 |
询价 | ||||
ST |
22+ |
BGA |
1000 |
原装正品碳化硅 |
询价 |
