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SCT016H120G3AG中文资料Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package数据手册ST规格书
SCT016H120G3AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
2511 |
4945 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | |||
STM |
两年内 |
NA |
520 |
实单价格可谈 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST |
22+ |
N/A |
8000 |
只做原装正品 |
询价 | ||
24+ |
789 |
询价 | |||||
鑫远鹏 |
25+ |
NA |
5000 |
价优秒回原装现货 |
询价 | ||
ST |
25+ |
30000 |
原装现货,可追溯原厂渠道 |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
ST(意法) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ST |
22+ |
BGA |
1000 |
原装正品碳化硅 |
询价 |
