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SCT016H120G3AG数据手册ST中文资料规格书
SCT016H120G3AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
两年内 |
NA |
520 |
实单价格可谈 |
询价 | ||
ST |
22+ |
BGA |
1000 |
原装正品碳化硅 |
询价 | ||
ST |
25+ |
30000 |
原装现货,可追溯原厂渠道 |
询价 | |||
ST |
47920 |
只做正品 |
询价 | ||||
STMicro |
22+ |
NA |
4000 |
原装正品支持实单 |
询价 | ||
ST(意法) |
2511 |
4945 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST |
22+ |
N/A |
8000 |
只做原装正品 |
询价 | ||
24+ |
789 |
询价 | |||||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 |
