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SCT025W120G3-4数据手册ST中文资料规格书
SCT025W120G3-4规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Very high operating junction temperature capability (TJ = 200 °C)
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
N/A |
17000 |
只做原装正品 |
询价 | ||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
AIM |
24+ |
8215 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
STMicroelectronics |
23+ |
SMD |
3652 |
原厂正品现货供应SIC全系列 |
询价 | ||
ST |
22+ |
BGA |
1000 |
原装正品碳化硅 |
询价 | ||
ST |
47920 |
只做正品 |
询价 | ||||
ST/意法半导体 |
25+ |
原厂封装 |
9999 |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
11000 |
询价 |
