UL-Listed Split-Core CT

APPLICATIONS • Energy and sub-metering • Electrical load monitoring • Network equipment • Instruments and sensors • Control systems • Solar and renewable energy

文件：426.91 Kbytes 页数：1 Pages

MAGNELAB

SMA Female PCB Connector Edge Mount .007 inch Pin Solder Attachment

Features • Operating Frequency • of 27 GHz Max. • Excellent VSWR of 1.25:1 • Gold Plated Beryllium • Copper Contact • Contact plating according • to MIL-G-45204 • Applications: • General Purpose Test • PCB Applications

文件：654.44 Kbytes 页数：4 Pages

FAIRVIEW

丝印：SCT55HU65G3AG；Package：HU3PAK；Automotive-grade silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in an HU3PAK package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：654.29 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：055TO65G3；Package：TO-LL；Silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in a TO-LL package

Features • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Source sensing pin for increased efficiency Applications • Switching mode power supply • DC-DC converters

文件：1.80866 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：SCT06075G3AG；Package：HU3PAK；Automotive-grade silicon carbide Power MOSFET 750 V, 58 mΩ typ., 30 A in an HU3PAK package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：620.17 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade silicon carbide Power MOSFET 750 V, 60 mΩ typ., 30 A in an HiP247-4 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applicatio

文件：204.17 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade silicon carbide Power MOSFET 750 V, 60 mΩ typ., 30 A in an HiP247 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) Applications • DC/DC converter for EV/HEV • Main invert

文件：202.21 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：70H120G3；Package：HPAK-7；Silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package

Features • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Source sensing pin for increased efficiency Applications • Switching mode power supply • Power supply for renewable energy systems • DC-DC conve

文件：676.07 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：70H120G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：396.48 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：SCT70W120G34；Package：HiP247-4；Silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an HiP247-4 package

Features • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications • Switching mode pow

文件：499.71 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体