SCT060W75G3AG中文资料意法半导体数据手册PDF规格书

厂商型号	SCT060W75G3AG
功能描述	Automotive-grade silicon carbide Power MOSFET 750 V, 60 mΩ typ., 30 A in an HiP247 package
文件大小	202.21 Kbytes
页面数量	12 页
生产厂商	STMICROELECTRONICS
中文名称	意法半导体
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-11-15 23:00:00
人工找货	SCT060W75G3AG价格和库存，欢迎联系客服免费人工找货

特性 Features

• AEC-Q101 qualified

• Very low RDS(on) over the entire temperature range

• High speed switching performances

• Very fast and robust intrinsic body diode

• Very high operating junction temperature capability (TJ

= 200 °C)

Applications

• DC/DC converter for EV/HEV

• Main inverter (electric traction)

• On board charger (OBC)

描述 Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3rd generation SiC MOSFET technology. The device

features a very low RDS(on) over the entire temperature range combined with low

capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.