丝印：70H120G3；Package：HPAK-7；Silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package

Features • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Source sensing pin for increased efficiency Applications • Switching mode power supply • Power supply for renewable energy systems • DC-DC conve

文件：676.07 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：70H120G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：396.48 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体