丝印：70N65DM6；Package：TO-247；N-channel 650 V, 36 mΩ typ., 68 A MDmesh™ DM6 Power MOSFETs in TO-247 and TO-247 long leads packages

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description These high-voltage N-ch

文件：528.08 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：70N65DM6；Package：TO-247；N-channel 650 V, 36 mΩ typ., 68 A MDmesh™ DM6 Power MOSFETs in TO-247 and TO-247 long leads packages

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description These high-voltage N-ch

文件：528.08 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：70N65DM6；Package：TO-247longleads；N-channel 650 V, 36 m廓 typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

文件：949.28 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体