STWA70N65DM6

丝印：70N65DM6；Package：TO-247；N-channel 650 V, 36 mΩ typ., 68 A MDmesh™ DM6 Power MOSFETs in TO-247 and TO-247 long leads packages

Features •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Applications •Switchingapplications Description Thesehigh-voltageN-ch

STWA70N65DM6

N沟道650 V、360 mOhm典型值、68 A MDmesh DM6功率MOSFET，TO-247长引线封装

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be; • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

STWA70N65DM6

丝印：70N65DM6；Package：TO-247longleads；N-channel 650 V, 36 m廓 typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

STW70N65DM6

N-channel650V,36mΩtyp.,68AMDmesh™DM6PowerMOSFETsinTO-247andTO-247longleadspackages

Features •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Applications •Switchingapplications Description Thesehigh-voltageN-ch

STWD100NYWY3F

ST/意法
SOT23-5

ST/意法