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IPD70R1K4CE

Marking:70S1K4CE;Package:PG-TO252;700V CoolMOS짧 CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPS70R1K4CE

Marking:70S1K4CE;Package:PG-TO251;700V CoolMOS짧 CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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