IPS70R1K4CE

Marking：70S1K4CE；Package：PG-TO251；700V CoolMOS짧 CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

IPS70R1K4CE

Marking：IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

IPSA70R1K4CE

700VCoolMOS짧CEPowerTransistor

MMD70R1K4P

700V1.4(ohm)N-channelMOSFET

MMD70R1K4PRH

700V1.4(ohm)N-channelMOSFET

MMD70R1K4PRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.2A@TC=25℃ ·DrainSourceVoltage :VDSS=700V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MMHS70R1K4P

700V1.4(ohm)N-channelMOSFET

MMHS70R1K4PRH

700V1.4(ohm)N-channelMOSFET

MMIS70R1K4P

700V1.4(ohm)N-channelMOSFET

MMIS70R1K4PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3.2A@TC=25℃ ·DrainSourceVoltage- :VDSS=700V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc