丝印：70N65DM6；Package：TO-247；N-channel 650 V, 36 mΩ typ., 68 A MDmesh™ DM6 Power MOSFETs in TO-247 and TO-247 long leads packages

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description These high-voltage N-ch

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N沟道650 V、360 mOhm典型值、68 A MDmesh DM6功率MOSFET，TO-247封装

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO247-4 package

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected \n• Excellent switching performance thanks to the extra driving source pin;

ST

意法半导体

N-channel 650 V, 36 mΩ typ., 68 A MDmesh™ DM6 Power MOSFETs in TO-247 and TO-247 long leads packages

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description These high-voltage N-ch

文件：528.08 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 36 m廓 typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

文件：949.28 Kbytes 页数：12 Pages

STMICROELECTRONICS

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