STW70N65DM6

丝印：70N65DM6；Package：TO-247；N-channel 650 V, 36 mΩ typ., 68 A MDmesh™ DM6 Power MOSFETs in TO-247 and TO-247 long leads packages

Features •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Applications •Switchingapplications Description Thesehigh-voltageN-ch

STW70N65DM6

N沟道650 V、360 mOhm典型值、68 A MDmesh DM6功率MOSFET，TO-247封装; • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.\n\n

STW70N65DM6-4

N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO247-4 package; • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected \n• Excellent switching performance thanks to the extra driving source pin;

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.\n\n

STWA70N65DM6

N-channel650V,36mΩtyp.,68AMDmesh™DM6PowerMOSFETsinTO-247andTO-247longleadspackages

Features •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Applications •Switchingapplications Description Thesehigh-voltageN-ch

STWA70N65DM6

N-channel650V,36m廓typ.,68AMDmeshDM6PowerMOSFETinaTO-247longleadspackage