丝印：SCT20U120G3AG；Package：HU3PAK；Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HU3PAK package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：598.55 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：20W120G34AG；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HiP247-4 package

Features • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) •

文件：203.39 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

UL-Listed Split-Core CT

APPLICATIONS • Energy and sub-metering • Electrical load monitoring • Network equipment • Instruments and sensors • Control systems • Solar and renewable energy

文件：426.91 Kbytes 页数：1 Pages

MAGNELAB

丝印：25H120G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：369.49 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：25W120G3-4AG；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247-4 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications

文件：1.29257 Mbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：25W120G3AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) Applications • Main inverter (electric traction) • DC/DC

文件：493.97 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：27H65G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an H²PAK-7 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

文件：374.48 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：027TO65G3；Package：TO-LL；Silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in a TO-LL package

Features • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Source sensing pin for increased efficiency Applications • AC-DC converters • DC-DC converters Description This silicon carbide Power MOSFET

文件：1.81117 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an HiP247-4 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications

文件：197.44 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：40H120G3；Package：H2PAK-7；Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package

Features • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Source sensing pin for increased efficiency Applications • Switching mode power supply • Power supply for renewable energy systems • DC-DC conve

文件：372.25 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体