丝印：25W120G3-4AG；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247-4 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications

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STMICROELECTRONICS

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