SCT027H65G3AG中文资料意法半导体数据手册PDF规格书

厂商型号	SCT027H65G3AG
功能描述	Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an H²PAK-7 package
丝印标识	27H65G3AG
封装外壳	H2PAK-7
文件大小	374.48 Kbytes
页面数量	14 页
生产厂商	STMICROELECTRONICS
中文名称	意法半导体
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-11-18 11:08:00
人工找货	SCT027H65G3AG价格和库存，欢迎联系客服免费人工找货

特性 Features

• AEC-Q101 qualified

• Very low RDS(on) over the entire temperature range

• High speed switching performances

• Very fast and robust intrinsic body diode

• Source sensing pin for increased efficiency

Applications

• Main inverter (electric traction)

• DC/DC converter for EV/HEV

• On board charger (OBC)

描述 Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3rd generation SiC MOSFET technology. The device

features a very low RDS(on) over the entire temperature range combined with

low capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.