首页>SCT020W120G3-4AG>规格书详情
SCT020W120G3-4AG中文资料意法半导体数据手册PDF规格书
| 厂商型号 |
SCT020W120G3-4AG |
| 功能描述 | Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HiP247-4 package |
| 丝印标识 | |
| 封装外壳 | HiP247-4 |
| 文件大小 |
203.39 Kbytes |
| 页面数量 |
12 页 |
| 生产厂商 | STMICROELECTRONICS |
| 中文名称 | 意法半导体 |
| 网址 | |
| 数据手册 | |
| 更新时间 | 2025-11-2 23:00:00 |
| 人工找货 | SCT020W120G3-4AG价格和库存，欢迎联系客服免费人工找货 |
SCT020W120G3-4AG规格书详情
特性 Features
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (TJ = 200 °C)
• Source sensing pin for increased efficiency
Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC)
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with low
capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AIM |
24+ |
8215 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
ST |
22+ |
N/A |
8000 |
只做原装正品 |
询价 | ||
ST |
25+ |
TO-247-4 |
1300 |
原装进口支持检测 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST(意法) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ST |
22+ |
BGA |
1000 |
原装正品碳化硅 |
询价 | ||
ST(意法) |
2511 |
4945 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | |||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
鑫远鹏 |
25+ |
NA |
5000 |
价优秒回原装现货 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 |
