丝印：40H120G3；Package：H2PAK-7；Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package

Features • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Source sensing pin for increased efficiency Applications • Switching mode power supply • Power supply for renewable energy systems • DC-DC conve

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STMICROELECTRONICS

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