Silicon N Channel IGBT High Speed Power Switching

Features • Trench gate and thin wafer technology (G6H-II series) • Low collector to emitter saturation voltage VCE(sat) = 1.1V typ • High speed switching tr = 90 ns typ, tf = 250 ns typ • Low leak current ICES = 1µA max • Isolated package TO-220FL

文件：99.88 Kbytes 页数：7 Pages

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Silicon N Channel IGBT High Speed Power Switching

Renesas

瑞萨

Silicon N Channel IGBT High Speed Power Switching

Features • Trench gate and thin wafer technology (G6H-II series) • Low collector to emitter saturation voltage VCE(sat) = 1.1V typ • High speed switching tr = 90 ns typ, tf = 250 ns typ • Low leak current ICES = 1µA max • Isolated package TO-220FL

文件：99.88 Kbytes 页数：7 Pages

RENESAS

瑞萨

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RENESAS

瑞萨

上传：深圳市佳斯泰科技有限公司

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RENESAS

瑞萨

上传：深圳市佳斯泰科技有限公司