RJP30K3数据表ic资料批发采购瑞萨RENESAS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
RJP30K3	文件：99.88 Kbytes Page：7 Pages	Silicon N Channel IGBT High Speed Power Switching Features • Trench gate and thin wafer technology (G6H-II series) • Low collector to emitter saturation voltage VCE(sat) = 1.1V typ • High speed switching tr = 90 ns typ, tf = 250 ns typ • Low leak current ICES = 1µA max • Isolated package TO-220FL 文件：99.88 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJP30K3DPP-M0	文件：99.88 Kbytes Page：7 Pages	Silicon N Channel IGBT High Speed Power Switching Features • Trench gate and thin wafer technology (G6H-II series) • Low collector to emitter saturation voltage VCE(sat) = 1.1V typ • High speed switching tr = 90 ns typ, tf = 250 ns typ • Low leak current ICES = 1µA max • Isolated package TO-220FL 文件：99.88 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJP30K3DPP-M0	文件：300 bytes Page：1 Pages	Silicon N Channel IGBT High Speed Power Switching	Renesas 瑞萨	Renesas
RJP4003ANS-00#Q1	文件：0 bytes Page：0 Pages	-	RENESAS 瑞萨上传：深圳市佳斯泰科技有限公司	RENESAS
RJP4007ANS-WS	文件：0 bytes Page：0 Pages	-	RENESAS 瑞萨上传：深圳市佳斯泰科技有限公司	RENESAS

更多RJP30K3供应商更新时间2025-12-10 16:44:00