RJH资料datasheet下载库存现货瑞萨第2页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
RJH60A83RDPE	文件：111.37 Kbytes Page：9 Pages	600V - 10A - IGBT Application: Inverter Features  Reverse conducting IGBT with monolithic diode  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 130 ns typ.) in one package  Trench gate and th 文件：111.37 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
RJH60A83RDPP-M0	文件：119.38 Kbytes Page：9 Pages	600V - 10A - IGBT Application: Inverter Features  Reverse conducting IGBT with monolithic diode  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 130 ns typ.) in one package  Trench gate and th 文件：119.38 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
RJH60A85RDPE	文件：112.21 Kbytes Page：9 Pages	600V - 15A - IGBT Application: Inverter Features  Reverse conducting IGBT with monolithic diode  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 160 ns typ.) in one package  Trench gate and th 文件：112.21 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
RJH60A85RDPP-M0	文件：119.99 Kbytes Page：9 Pages	600V - 15A - IGBT Application: Inverter Features  Reverse conducting IGBT with monolithic diode  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 160 ns typ.) in one package  Trench gate and th 文件：119.99 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
RJH60C9DPD	文件：173.72 Kbytes Page：4 Pages	Silicon N Channel IGBT Application: Inverter Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode 文件：173.72 Kbytes 页数：4 Pages	RENESAS 瑞萨	RENESAS
RJH60C9DPD-00-J2	文件：173.72 Kbytes Page：4 Pages	Silicon N Channel IGBT Application: Inverter Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode 文件：173.72 Kbytes 页数：4 Pages	RENESAS 瑞萨	RENESAS
RJH60D0DPK	文件：171.47 Kbytes Page：4 Pages	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 文件：171.47 Kbytes 页数：4 Pages	RENESAS 瑞萨	RENESAS
RJH60D0DPK	文件：300.1 Kbytes Page：2 Pages	IGBT DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.2V@IC=22A · High Current Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC 文件：300.1 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
RJH60D0DPK-00-T0	文件：171.47 Kbytes Page：4 Pages	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 文件：171.47 Kbytes 页数：4 Pages	RENESAS 瑞萨	RENESAS
RJH60D0DPM	文件：89.45 Kbytes Page：8 Pages	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 文件：89.45 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS

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技术参数

静电容量：
100 uF ± 20 %
额定电压：
100 V
tanδ (max)：
0.07
使用温度范围：
-55 to +105 ℃
Leakage current (min)：
102 uA at 2 min
Rated Ripple (max)：
739 mArms at 100k Hz / 105 ℃
Impedance ratio___[-25℃/+20℃]：
2
Impedance ratio___[-55℃/+20℃]：
3
Impedance (max)：
0.15 Ω at 100k Hz / 20 ℃
Endurance___[Test time]：
3000 hr at 105 ℃
Endurance___[Capacitance change]：
Within ±20% of initial value
Endurance___[tanδchange]：
200% or less of initial specified value
尺寸 (φD)：
φ10 +0.5/-0 mm
尺寸 (L)：
Max 30 +2 mm
尺寸 (P (F))：
5 ±0.5 mm
尺寸 (C (d))：
φ0.6 ±0.05 mm
形状：
Miniature
类别：
Low Impedance
RoHS Compliance (10 subst.)：
Yes
REACH Compliance (209 subst.)：
Yes
适用焊接方法：
Flow
包装：
1000

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市鹏和科技有限公司	RJH65T14	瑞萨	24+	TO247	5000	全现原装公司现货	询价
上海金庆电子技术有限公司	RJHSE-5080		新		561	全新原装货期两周	询价
深圳市赛芯源科技有限公司	RJH60D3DPP-M0#T2	RENESAS	19+	TO-220F	32000	原装正品,现货特价	询价
深圳市宝芯创电子有限公司	RJHSE5481A1	AMP	1736+	RJ45	15238	原厂优势渠道	询价
深圳市恒创达实业有限公司	RJHSE-5F80-010F	AMPHENOL	17+	0	6200	100%原装正品现货	询价
深圳市粤骏腾电子科技有限公司	RJHSE5080	AMPHENOLCANADACORP	24+	NA	15956	原装现货,专业配单专家	询价
深圳市锐视安科技有限公司	RJH60F5DPQ-A0#T0(TO220)	RENESAS	N/L	TO-220	220	只做原装持续供应!!	询价
齐创科技(上海,北京,青岛)有限公司	RJHSE538A02	AMPHENOL	23+	连接器	5000	原装正品,假一罚十	询价
深圳市华来深电子有限公司	RJH3349	RENESAS	23+	TO-3P	8560	受权代理!全新原装现货特价热卖!	询价
千层芯半导体(深圳)有限公司	RJH60F7ADPK	RENESAS	24+	TO-3P	3000	全新原装环保现货	询价

更多RJH供应商更新时间2025-12-3 10:20:00

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