RJH60A85RDPP-M0中文资料瑞萨数据手册PDF规格书

特性 Features

 Reverse conducting IGBT with monolithic diode

 Short circuit withstand time (5 s typ.)

 Low collector to emitter saturation voltage

VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C)

 Built-in fast recovery diode (trr = 160 ns typ.) in one package

 Trench gate and thin wafer technology

 High speed switching

tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 15 A, Rg = 5 , Ta = 25°C, inductive load)