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16N05

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

D16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

KGF16N05D

N-Channel5.5VDualPowerMOSFET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RFD16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N05

60VN-ChannelMOSFET

Features VDS(V)=60V RDS(ON)

UMWUMW

友台友台半导体

RFD16N05L

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N05L

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05LSM

MOSFET-Power,N-Channel,LogicLevel50V,16A,47m

TheseareN−ChannellogiclevelpowerMOSFETsmanufactured usingtheMegaFETprocess.Thisprocess,whichusesfeaturesizes approachingthoseofLSIintegratedcircuitsgivesoptimumutilization ofsilicon,resultinginoutstandingperformance.Theyweredesigned forusewithlogiclevel(5V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

RFD16N05LSM

N-ChannelLogicLevelPowerMOSFET50V,16A,47m廓

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05LSM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD16N05LSM

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N05LSM

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05LSM-NL

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD16N05SM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD16N05SM

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05SM

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N05SM

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
23+
TO-252
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
22+
TO-252
1905
原装现货假一赔十
询价
FAIRCHILD/仙童
2022
TO-252
80000
原装现货,OEM渠道,欢迎咨询
询价
FAIRCHILD/仙童
21+
TO-252
9852
只做原装正品现货!或订货假一赔十!
询价
INTERSIL
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
哈里斯
TO-251
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
23+
N/A
78300
一级代理放心采购
询价
仙童
05+
TO-252
12000
原装进口
询价
FAI
6300
询价
FSC
17+
TO-252
6200
询价
更多RFD16N05LMOS(场效应管)供应商 更新时间2024-6-1 14:34:00