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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
16N05	文件：897.38 Kbytes Page：6 Pages	N-Channel 60-V (D-S) MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
D16N05	文件：226.37 Kbytes Page：8 Pages	16A,50V,0.047Ohm,N-ChannelPowerMOSFETs	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
KGF16N05D	文件：417.89 Kbytes Page：8 Pages	N-Channel5.5VDualPowerMOSFET	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
RFD16N05	文件：491.7 Kbytes Page：6 Pages	60VN-ChannelMOSFET Features VDS(V)=60V RDS(ON)	UMWUMW 友台友台半导体	UMW
RFD16N05	文件：226.37 Kbytes Page：8 Pages	16A,50V,0.047Ohm,N-ChannelPowerMOSFETs	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
RFD16N05	文件：414.29 Kbytes Page：8 Pages	16A,50V,0.047Ohm,N-ChannelPowerMOSFETs TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
RFD16N05	文件：47.83 Kbytes Page：6 Pages	16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
RFD16N05	文件：91.41 Kbytes Page：8 Pages	16A,50V,0.047Ohm,N-ChannelPowerMOSFETs TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
RFD16N05L	文件：47.83 Kbytes Page：6 Pages	16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
RFD16N05L	文件：158.72 Kbytes Page：7 Pages	16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
RFD16N05LSM	文件：158.72 Kbytes Page：7 Pages	16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
RFD16N05LSM	文件：609.98 Kbytes Page：7 Pages	N-ChannelLogicLevelPowerMOSFET50V,16A,47m廓 TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
RFD16N05LSM	文件：897.13 Kbytes Page：6 Pages	N-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
RFD16N05LSM	文件：47.83 Kbytes Page：6 Pages	16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
RFD16N05LSM	文件：395.55 Kbytes Page：9 Pages	MOSFET-Power,N-Channel,LogicLevel50V,16A,47m TheseareN−ChannellogiclevelpowerMOSFETsmanufactured usingtheMegaFETprocess.Thisprocess,whichusesfeaturesizes approachingthoseofLSIintegratedcircuitsgivesoptimumutilization ofsilicon,resultinginoutstandingperformance.Theyweredesigned forusewithlogiclevel(5V	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
RFD16N05LSM-NL	文件：898.21 Kbytes Page：6 Pages	N-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
RFD16N05SM	文件：897.27 Kbytes Page：6 Pages	N-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
RFD16N05SM	文件：226.37 Kbytes Page：8 Pages	16A,50V,0.047Ohm,N-ChannelPowerMOSFETs	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
RFD16N05SM	文件：91.41 Kbytes Page：8 Pages	16A,50V,0.047Ohm,N-ChannelPowerMOSFETs TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
RFD16N05SM	文件：414.29 Kbytes Page：8 Pages	16A,50V,0.047Ohm,N-ChannelPowerMOSFETs TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	16N05	HARRIS	12+	TO-252	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市特顺芯科技有限公司	16N05	哈里斯		TO-252	1950		询价
深圳市博浩通科技有限公司	16N05	NULL	23+	TO-252	6650	专业优势供应	询价
深圳市百视威讯电子科技有限公司	16N05		23+	N/A	48700	正品授权货源可靠	询价
深圳兆威电子有限公司	16N05	VB	2019	TO252	55000	绝对原装正品假一罚十!	询价
瀚佳科技(深圳)有限公司	16N05		2020+	TO252	16800	绝对原装进口现货,假一赔十,价格优势!	询价
深圳市汇莱威科技有限公司	16N05	VBSEMI/台湾微碧		TO252	265209	假一罚十原包原标签常备现货!	询价
深圳市大联智电子有限公司	16N05	NULL	2022+	TO-252	7300	原装现货	询价
深圳市九方航科技有限公司	16N05	VBSEMI	19+	TO252	29600	绝对原装现货,价格优势!	询价
上海鑫科润电子科技有限公司	16N05L	HARRIS	1996	TO252	950	原装现货海量库存欢迎咨询	询价

更多16N05供应商更新时间2024-4-30 11:04:00

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