8A, 1200V Hyperfast Diode

The RHRP8120 is a hyperfast diodes with soft recovery characteristics (trr

文件：50.25 Kbytes 页数：4 Pages

Intersil

Ultra-fast Rectifier

FEATURES ·Super fast switching for high efficiency. ·Low reverse leakage. ·High forward surge current capability. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Rectifier in switch mode supplies

文件：276.52 Kbytes 页数：2 Pages

ISC

无锡固电

10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diodes

GENERAL DESCRIPTION RHRP8120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. PRODUCT FEATURE • Ultrafast Recovery Time • Soft Recovery Characteristics • Low Recovery Loss • Low Forward Voltage • High Surge Current Capability • Lo

文件：636.97 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体

8A, 1200V Hyperfast Diode

The RHRP8120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of sw

文件：351.02 Kbytes 页数：5 Pages

Fairchild

仙童半导体

Hyperfast Recovery trr = 70 ns (@ IF= 8 A)

文件：2.24311 Mbytes 页数：5 Pages

Fairchild

仙童半导体

8A, 1200V Hyperfast Diode

The RHRP8120 is a hyperfast diodes with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.\nThis device is intended for use as a freewheeling/clamping diode and rectifier in a • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <55ns\n• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175°C\n• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V\n• Avalanche Energy Rated\n• Planar ConstructionApplications\n• Switchin;

Renesas

瑞萨

8A，1200V，极快速二极管

RHRP8120 是一款具有软恢复特性的超高速二极管。它采用氮化硅钝化离子布植外延平面结构，其恢复时间仅为超快速二极管恢复时间的一半。这些器件主要是在各种开关电源及其他电源开关应用中用作续流/箝位二极管。其低存储电荷和超高速软恢复特性可最大程度降低多种电源开关电路中的振铃和电气噪声，由此降低开关晶体管中的功耗。 •超高速恢复，Trr = 70 ns（需 IF= 8 A）\n•最大正向电压，VF = 3.2 V（需 TC = 25°C）\n•1200 V 反向电压和高可靠性\n•雪崩能量额定值\n•符合RoHS标准;

ONSEMI

安森美半导体

10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diodes

ThinkiSemi

思祁半导体

Package：TO-220-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 1200V 8A TO220-2L

ONSEMI

安森美半导体

8A, 1200V Hyperfast Dual Diode

The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics (trr

文件：49.83 Kbytes 页数：4 Pages

Intersil