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D16N05

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

16N05

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

KGF16N05D

N-Channel5.5VDualPowerMOSFET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

RFD16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

RFD16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

RFD16N05

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

RFD16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

RFD16N05

60VN-ChannelMOSFET

Features VDS(V)=60V RDS(ON)

UMWUMW

友台友台半导体

UMW

RFD16N05L

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

RFD16N05L

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

RFD16N05LSM

MOSFET-Power,N-Channel,LogicLevel50V,16A,47m

TheseareN−ChannellogiclevelpowerMOSFETsmanufactured usingtheMegaFETprocess.Thisprocess,whichusesfeaturesizes approachingthoseofLSIintegratedcircuitsgivesoptimumutilization ofsilicon,resultinginoutstandingperformance.Theyweredesigned forusewithlogiclevel(5V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

RFD16N05LSM

N-ChannelLogicLevelPowerMOSFET50V,16A,47m廓

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

RFD16N05LSM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

RFD16N05LSM

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

RFD16N05LSM

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

RFD16N05LSM-NL

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

RFD16N05SM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

RFD16N05SM

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

RFD16N05SM

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

RFD16N05SM

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

详细参数

  • 型号:

    D16N05

  • 制造商:

    Harris Corporation

供应商型号品牌批号封装库存备注价格
HARRIS
99+
TO-251
67
询价
FAIRCHILD
2017+
TO-251-3
25899
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
进口原装
23+
TO-251
9500
专业优势供应
询价
INTERSI
2020+
TO-251
992
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
HARRIS
18+
TO-252
999999
进口全新原装现货
询价
23+
N/A
90250
正品授权货源可靠
询价
FAIRCHILD
23+
TO-251
12300
全新原装真实库存含13点增值税票!
询价
INTERSI
2020+
TO-251
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
HARRIS
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
更多D16N05供应商 更新时间2024-4-27 16:30:00