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RFP40N10

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFP40N10

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFP40N10

N-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFP40N10LE

40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFP40N10LE

N-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

40N10

40Amps,100VoltsN-CHANNELMOSFET

FEATURE ●40A,100V,RDS(ON)=40mΩ@VGS=10V/20A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

40N10

FastSwitching

FEATURES •DrainCurrentID=40A@TC=25℃ •DrainSourceVoltage- :VDSS=100V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max) •FastSwitching APPLICATIONS •Switchingpowersupplies,converters,ACandDCmotorcontrols

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

40N10

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

40N10B

40Amps,100VoltsN-CHANNELMOSFET

FEATURE ●40A,100V,RDS(ON)=40mΩ@VGS=10V/20A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

40N10F

40Amps,100VoltsN-CHANNELMOSFET

FEATURE ●40A,100V,RDS(ON)=40mΩ@VGS=10V/20A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

40N10H

40Amps,100VoltsN-CHANNELMOSFET

FEATURE ●40A,100V,RDS(ON)=40mΩ@VGS=10V/20A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

CED40N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,37A,RDS(ON)=32mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED40N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,37A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU40N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,37A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU40N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,37A,RDS(ON)=32mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU40N10

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

CJU40N10

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

CJU40N10

N-ChannelPowerMOSFET

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

DTU40N10

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DTU40N10

N-Channel100-V(D-S)MOSFETTrenchFETPowerMOSFETS

DINTEK

DinTek Semiconductor Co,.Ltd

详细参数

  • 型号:

    RFP40N10

  • 功能描述:

    MOSFET TO-220AB N-Ch Power

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
HARRIS
09+
TO-220
6000
原装正品现货
询价
H
24+
TO 220
157572
明嘉莱只做原装正品现货
询价
哈里斯
05+
TO-220
30000
自己公司全新库存绝对有货
询价
INTERSIL/FSC
23+
TO-220
28610
询价
5000
公司存货
询价
FSC
2020+
TO-220
290
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
INTERSIL
17+
TO-220
6200
询价
HARRIS
16+
TO-220
10000
全新原装现货
询价
FAIRCHILD
23+
TO-220
8600
全新原装现货
询价
FAIRCHILD
22+
6868
原装现货,可开13%税票
询价
更多RFP40N10供应商 更新时间2024-4-28 15:30:00