45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：73.85 Kbytes 页数：8 Pages

INTERSIL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.39 Kbytes 页数：2 Pages

ISC

无锡固电

45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：82.12 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

45A, 60V, 0.028 Ohm, N-Channel Power

文件：381.64 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

MOSFET N-CH 60V 45A TO-220AB

ONSEMI

安森美半导体

45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

文件：427.15 Kbytes 页数：8 Pages

INTERSIL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.41 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件：1.31332 Mbytes 页数：9 Pages

VBSEMI

微碧半导体