4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate-drive power. These

文件：38.53 Kbytes 页数：4 Pages

Intersil

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.06 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

文件：1.08671 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

文件：323.74 Kbytes 页数：7 Pages

Sipex

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

文件：323.74 Kbytes 页数：7 Pages

Sipex

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.3 Kbytes 页数：2 Pages

ISC

无锡固电