45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs

Description The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for

文件：78.86 Kbytes 页数：8 Pages

Intersil

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 20V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.1 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE

N-CHANNEL ENHANCEMENT MODE ■ DESCRIPTION As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. ■ FEATURES * 45A, 20V * RDS(ON) = 0.022Ω * Temperature compensating PSPICE model * Be dri

文件：249.6 Kbytes 页数：5 Pages

UTC

友顺

Hard switched and high frequency circuits

文件：1.17511 Mbytes 页数：6 Pages

HMSEMI

华之美半导体

Excellent package for good heat dissipation

文件：978.71 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs

Description The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for

文件：78.86 Kbytes 页数：8 Pages

Intersil