45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

Description These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utili zation of silicon, resulting in outstanding performance. They were designed for use in applications such as switchi

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INTERSIL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.11 Kbytes 页数：2 Pages

ISC

无锡固电

45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

Description\nThese are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utili zation of silicon, resulting in outstanding performance. They were designed for use in applications such as switching r • 45A, 30V\n•rDS(ON)= 0.022Ω\n• Temperature CompensatingPSPICE Model\n• Can be Driven Directly from CMOS, NMOS, and TTL Circuits\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• 175°C Operating Temperature;

Renesas

瑞萨

Logic N-Channel MOSFET

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ETCList of Unclassifed Manufacturers

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微碧半导体