4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate-drive power. These

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INTERSIL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 350V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

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微碧半导体

4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

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