175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor

Description The 20101 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. It is rated at 175 watts P-sync minimum output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliab

文件：44.64 Kbytes 页数：3 Pages

Ericsson

爱立信

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI PTB20101 is Designed for General Purpose Class AB Power Amplifier Applications up to 860 MHz. FEATURES: • 175 W, 470-860 MHz • Silicon Nitride Passivated • Omnigold™ Metalization System

文件：49.39 Kbytes 页数：1 Pages

ASI

20 Watts, 925-960 MHz Cellular Radio RF Power Transistor

Description The 20105 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to

文件：45.81 Kbytes 页数：3 Pages

Ericsson

爱立信

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI PTB20111 is Designed for General Purpose Class AB Power Amplifier Applications up to 900 MHz. FEATURES: • 25 W, 860-900 MHz • Silicon Nitride Passivated • Omnigold™ Metalization System

文件：39.54 Kbytes 页数：1 Pages

ASI

85 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Description The 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used

文件：47.28 Kbytes 页数：3 Pages

Ericsson

爱立信

100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor

Description The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a final stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation

文件：235.55 Kbytes 页数：5 Pages

Ericsson

爱立信

30 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Description The 20134 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used

文件：42.55 Kbytes 页数：2 Pages

Ericsson

爱立信

85 Watts, 925-960 MHz Cellular Radio RF Power Transistor

Description The 20135 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to

文件：47.84 Kbytes 页数：3 Pages

Ericsson

爱立信

18 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor

Description The 20141 is a class AB, NPN, common emitter RF power transistor intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are use

文件：41.71 Kbytes 页数：2 Pages

Ericsson

爱立信

6 Watts, 915-960 MHz Cellular Radio RF Power Transistor

Description The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to

文件：41.55 Kbytes 页数：3 Pages

Ericsson

爱立信