14 watts, 1.477-1.501 GHz Cellular Radio RF Power Transistor

Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are u

文件：40.32 Kbytes 页数：2 Pages

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0.7 Watts, 1525-1660 MHz INMARSAT RF Power Transistor

Description The 20077 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 0.7 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure exc

文件：170.78 Kbytes 页数：3 Pages

Ericsson

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2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor

Description The 20078 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used

文件：192.54 Kbytes 页数：3 Pages

Ericsson

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10 Watts, 1.6-1.7 GHz INMARSAT RF Power Transistor

Description The 20079 is a class A/AB, NPN, silicon bipolar junction, internally matched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10 Watts minimum output power for PEP applications. Ion implantation, nitride surface pas

文件：184.58 Kbytes 页数：3 Pages

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25 Watts, 1.6-1.7 GHz RF Power Transistor

Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization

文件：445.22 Kbytes 页数：3 Pages

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150 Watts, 470-860 MHz UHF TV Power Transistor

Description The 20081 is a class AB, NPN, common emitter RF power transistor intended for 28 to 32 Vdc operation across the 470 to 860 MHz UHF TV frequency band. It is rated at 100 watts minimum output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure

文件：385.77 Kbytes 页数：3 Pages

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15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor

Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent de

文件：168.01 Kbytes 页数：4 Pages

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30 Watts, 470-860 MHz UHF TV Linear Power Transistor

Description The 20091 is an NPN, common emitter RF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 30 watts P-sync output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lo

文件：357.2 Kbytes 页数：2 Pages

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15 Watts, 915-960 MHz Cellular Radio RF Power Transistor

Description The 20095 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold meta

文件：44.6 Kbytes 页数：3 Pages

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40 Watts, 915-960 MHz Cellular Radio RF Power Transistor

Description The 20097 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 40 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold meta

文件：47.36 Kbytes 页数：3 Pages

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