Low Profi le Slide Potentiometer

Features ■ Carbon element ■ Metal housing ■ 45-100 mm travel ■ Single and dual gang ■ Dust cover option ■ RoHS compliant* Applications ■ Audio/TV sets ■ Car radio ■ Amplifi ers/mixers/drum machines/synthesizers ■ PCs/monitors ■ Appliances

文件：320.07 Kbytes 页数：2 Pages

Bourns

伯恩斯

Low Profi le Slide Potentiometer

Features ■ Carbon element ■ Metal housing ■ 45-100 mm travel ■ Single and dual gang ■ Dust cover option ■ RoHS compliant* Applications ■ Audio/TV sets ■ Car radio ■ Amplifi ers/mixers/drum machines/synthesizers ■ PCs/monitors ■ Appliances

文件：320.07 Kbytes 页数：2 Pages

Bourns

伯恩斯

BAROCAP Barometer PTB110

Features Vaisala BAROCAPâ sensor Several pressure ranges Accuracy ±0.3 hPa at +20 °C Long-term stability On/Off control with external trigger Output voltage 0 … 2.5 or 0 … 5 VDC Current consumption less than 4 mA Mountable on 35 mm wide DIN rail Traceable calibration (certificate incl

文件：1.65233 Mbytes 页数：2 Pages

VAISALA

维萨拉

Proximity Switch - Reed Switch based

APPLICATIONS • Position and limit sensing • Linear actuators • Security system switch • Door Switch

文件：385.63 Kbytes 页数：1 Pages

COMUS

4 Watts, 915-960 MHz Cellular Radio RF Power Transistor

Description The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metal

文件：54.46 Kbytes 页数：3 Pages

Ericsson

爱立信

50 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Description The 20004 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 50 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold

文件：47.26 Kbytes 页数：3 Pages

Ericsson

爱立信

15 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Description The 20005 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold meta

文件：44.55 Kbytes 页数：3 Pages

Ericsson

爱立信

4 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Description The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metal

文件：44.97 Kbytes 页数：3 Pages

Ericsson

爱立信

30 Watts, 935-960 MHz Cellular Radio RF Power Transistor

Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold meta

文件：47.66 Kbytes 页数：3 Pages

Ericsson

爱立信

10 Watts, 935-960 MHz Cellular Radio RF Power Transistor

Description The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure exce

文件：44.23 Kbytes 页数：3 Pages

Ericsson

爱立信