PTB技术资料参数贸易商伯恩斯（邦士）-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
PTB	文件：29.88 Kbytes Page：1 Pages	thru bulkhead receptacle	AAOAmphenol Aerospace Operations 安费诺安费诺航空电子公司	AAO
PTB	文件：36.74 Kbytes Page：2 Pages	Panel Controls	BournsBourns Inc. 伯恩斯（邦士）	Bourns
PTB110	文件：1.65233 Mbytes Page：2 Pages	BAROCAP Barometer PTB110 Features VaisalaBAROCAPâsensor Severalpressureranges Accuracy±0.3hPaat+20°C Long-termstability On/Offcontrolwithexternal trigger Outputvoltage0…2.5or 0…5VDC Currentconsumptionlessthan 4mA Mountableon35mmwideDINrail Traceablecalibration (certificateincl	VAISALAVaisala 维萨拉（北京）维萨拉（北京）测量技术有限公司	VAISALA
PTB20003	文件：54.46 Kbytes Page：3 Pages	4 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The20003isaclassAB,NPN,commonemitterRFpowertransistorintendedfor25Vdcoperationacrossthe915to960MHzfrequencyband.Ratedat4Wattsminimumoutputpower,itmaybeusedforbothCWandPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmetal	Ericsson Ericsson Microelectronics	Ericsson
PTB20004	文件：47.26 Kbytes Page：3 Pages	50 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The20004isaclassAB,NPN,commonemitterRFpowertransistor intendedfor25Vdcoperationacrossthe860to900MHzfrequency band.Ratedat50wattsminimumoutputpower,itmaybeusedfor bothCWandPEPapplications.Ionimplantation,nitridesurface passivationandgold	Ericsson Ericsson Microelectronics	Ericsson
PTB20005	文件：44.55 Kbytes Page：3 Pages	15 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The20005isaclassAB,NPN,commonemitterRFpowertransistorintendedfor25Vdcoperationacrossthe860to900MHzfrequencyband.Ratedat15wattsminimumoutputpower,itmaybeusedforbothCWandPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmeta	Ericsson Ericsson Microelectronics	Ericsson
PTB20006	文件：44.97 Kbytes Page：3 Pages	4 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The20006isaclassAB,NPN,commonemitterRFpowertransistorintendedfor25Vdcoperationacrossthe860to900MHzfrequencyband.Ratedat4wattsminimumoutputpower,itmaybeusedforbothCWandPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmetal	Ericsson Ericsson Microelectronics	Ericsson
PTB20007	文件：47.66 Kbytes Page：3 Pages	30 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The20007isaclassAB,NPN,commonemitterRFpowertransistorintendedfor24Vdcoperationacrossthe935to960MHzfrequencyband.Ratedat30wattsminimumoutputpower,itmaybeusedforbothCWandPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmeta	Ericsson Ericsson Microelectronics	Ericsson
PTB20008	文件：44.23 Kbytes Page：3 Pages	10 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The20008isaclassAB,NPN,commonemitterRFpowertransistorintendedfor24Vdcoperationfrom935to960MHz.Ratedat10wattsminimumoutputpower,itmaybeusedforbothCWandPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmetallizationensureexce	Ericsson Ericsson Microelectronics	Ericsson
PTB20009	文件：39.3 Kbytes Page：2 Pages	2.5 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The20009isaclassAB,NPN,commonemitterRFpowertransistorintendedfor24Vdcoperationacrossthe935to960MHzfrequencyband.Ratedat2.5Wattsminimumoutputpower,itmaybeusedforbothCWandPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmet	Ericsson Ericsson Microelectronics	Ericsson
PTB20011	文件：46.7 Kbytes Page：3 Pages	20 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor Description The20011isanNPNcommonemitterUHFpowertransistorintendedfor26.5VdcclassAoperationfrom470to860MHz.Itisratedat20watts(p-sync)outputpower,andmaybeusedforbothCWandPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmetallizationen	Ericsson Ericsson Microelectronics	Ericsson
PTB20017	文件：44.51 Kbytes Page：3 Pages	150 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The20017isaclassAB,NPN,commonemitterRFpowertransistorintendedfor25Vdcoperationacrossthe860to900MHzcellularradiofrequencyband.Ratedat150wattsminimumoutputpower,itmaybeusedforbothCWandPEPapplications.Ionimplantation,nitridesurfacepassivati	Ericsson Ericsson Microelectronics	Ericsson
PTB20030	文件：44.57 Kbytes Page：3 Pages	15 Watts, 420-470 MHz RF Power Transistor Description The20030isaclassAB,NPN,commonemitterRFpowertransistorintendedfor24Vdcoperationacrossthe420to470MHzfrequencyband.Ratedat15wattsminimumoutputpower,itmaybeusedforbothCWandPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmeta	Ericsson Ericsson Microelectronics	Ericsson
PTB20031	文件：44.87 Kbytes Page：2 Pages	40 Watts, 420-470 MHz RF Power Transistor Description The20031isaclassAB,NPN,commonemitterRFpowertransistorintendedfor24Vdcoperationfrom420to470MHz.Itisratedat40wattsminimumoutputpower,andmaybeusedforbothCWandPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmetallizationare	Ericsson Ericsson Microelectronics	Ericsson
PTB20038	文件：44.94 Kbytes Page：2 Pages	25 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The20038isaclassAB,NPN,commonemitterRFpowertransistorintendedfor25Vdcoperationacrossthe860to900MHzfrequencyband.Ratedat25wattsminimumoutputpower,itmaybeusedforbothCWandPEPapplications.Itisspecificallydesignedforhighefficiencyoperationa	Ericsson Ericsson Microelectronics	Ericsson
PTB20038	文件：26.72 Kbytes Page：2 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIPTB20038isDesignedforGeneralPurposeClassABPowerAmplifierApplicationsupto900MHz. FEATURES: •25W,860-900MHz •SiliconNitridePassivated •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
PTB20046	文件：40.58 Kbytes Page：2 Pages	1 Watt, 1465-1513 MHz Cellular Radio RF Power Transistor Description The20046isaclassAB,NPN,commonemitterRFpowertransistorintendedfor26Vdcoperationfrom1465to1501MHz.Ratedat1wattminimumoutputpower,itmaybeusedforbothCWandPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmetallizationareusedto	Ericsson Ericsson Microelectronics	Ericsson
PTB20051	文件：41.74 Kbytes Page：2 Pages	6 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor Description The20051isaclassAB,NPN,commonemitterRFpowertransistorintendedfor26Vdcoperationfrom1.465to1.513GHz.Ratedat6wattsminimumoutputpower,itmaybeusedforbothCWandPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmetallizationareused	Ericsson Ericsson Microelectronics	Ericsson
PTB20053	文件：46.38 Kbytes Page：3 Pages	60 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The20053isaclassAB,NPN,commonemitterRFpowertransistorintendedfor25Vdcoperationfrom860to900MHz.Ratedat60wattsminimumoutputpower,itmaybeusedforbothCWandPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmetallizationareusedto	Ericsson Ericsson Microelectronics	Ericsson
PTB20074	文件：40.32 Kbytes Page：2 Pages	14 watts, 1.477-1.501 GHz Cellular Radio RF Power Transistor Description The20074isaclassAB,NPN,commonemitterRFpowertransistorintendedfor26Vdcoperationfrom1.477to1.501GHz.Ratedat14wattsminimumoutputpower,itmaybeusedforbothCWandPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmetallizationareu	Ericsson Ericsson Microelectronics	Ericsson

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详细参数

型号：
PTB
制造商：
Weidmuller

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市昌和盛利电子有限公司	PTB20151R	INFINEON	23+	高频管	7936		询价
深圳市毅创腾电子科技有限公司	PTB20001	ERICSSON	23+	TO-61	450	专营高频管模块,全新原装!	询价
深圳市一线半导体有限公司	PTB20272				3000	公司存货	询价
深圳市凯斯宇科技有限公司	ptb10135	ERICSSON	2022		223	原厂原装正品,价格超越代理	询价
深圳市佳鑫美电子科技有限公司	PTB78560AAH	TI	22+	MODULE	6800	绝对原装!真实库存!	询价
深圳市博浩通科技有限公司	PTBA2511PE	进口原装	23+	DIP8	1400	特价库存	询价
深圳市粤科源兴科技有限公司	PTB20111	ERICSSON	13+		11258	原装分销	询价
深圳市卓越微芯电子有限公司	PTB48610AAD	TI	2020+	MODULE	95	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市利加科技有限公司	PTB650S-01-1-06-1	JITE	16+	NA	8800	原装现货,货真价优	询价
千层芯半导体(深圳)有限公司	PTB48540BAS	TI	17+	DIPMODULE	6000	进口原装正品假一赔十,货期7-10天	询价

更多PTB供应商更新时间2024-6-15 15:54:00

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